Maiti, C. K., <br/><br/>
Strain-engineered MOSFETs / 
K. Maiti, T.K. Maiti. 
 - 1 online resource (xix, 300 pages) 
<br/><br/>1. Introduction 2. Substrate-induced strain engineering in CMOS technology 3. Process-induced stress engineering in CMOS technology 4. Electronic properties of strain-engineered semiconductors 5. Strain-engineered MOSFETs 6. Noise in strain-engineered devices / C. Mukherjee 7. Technology CAD of strain-engineered MOSFETs 8. Reliability and degradation of strain-engineered MOSFETs 9. Process compact modelling of strain-engineered MOSFETs 10. Process-aware design of strain-engineered MOSFETs 11. Conclusions. 
<br/><br/> "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- 
<br/><br/><label>ISBN: </label>9781315216577 
<br/><br/><label>Standard No.: </label>10.1201/9781315216577   doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Integrated circuits--Fault tolerance.<br/>Metal oxide semiconductor field-effect transistors--Reliability.<br/>Strains and stresses.
<br/><br/><label>LC Class. No.: </label>TK7871.99.M44  / M248 2013 
<br/><br/><label>Dewey Class. No.: </label>621.3815284  / M232